Electrical characterization of back-gated and top-gated germanium-core/silicon-shell nanowire field-effect transistors

Germanium-core/silicon-shell nanowires were grown by an ex-situ method where germanium nanowires were first grown using a vapour-liquid-solid growth mechanism, followed by catalyst removal in an etching solution and deposition of amorphous silicon on the nanowire sidewalls. Back-gated and top-gated field effect transistors based on germanium-core/silicon-shell nanowires exhibited p-type depletion mode characteristics. Field-effect hole mobilities up to 501 cm
²
/V.s were extracted from these nanowires.