One hundred picosecond spin relaxation in GaAs/GaAsP strain-compensated superlattice as highly spin-polarized electron source

Summary form only given. A GaAs/GaAsP strain-compensated superlattice (SL) is a highly promising spin-polarized electron source. In this paper, we report the spin relaxation for a GaAs/GaAsP strain-compensated SL obtained by time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of the GaAs/GaAsP strain-compensated SL was measured to be 104 ps at room temperature. This longer spin relaxation time than that of conventional GaAs multiple quantum wells shows that the present SL is suitable for use as a highly spin-polarized electron source.