Contact resistances in Trigate devices in a Non-Equilibrium Green's Functions framework

We compute the contact resistances in Trigate and FinFET devices using a Non-Equilibrium Green's Functions approach. Electron-phonon, surface roughness and Coulomb scattering are taken into account. We show that the contact resistance represents a significant part of the total resistance of devices with sub-30 nm gate lengths. The analysis of the quasi-Fermi level profile reveals that the spacers between the heavily doped source/drain and the gate are major contributors to the contact resistance. We analyze the impact of different design parameters (cross section and doping profile in the contacts) on the electrical performances of the devices. The simulations are compared to experimental data.