Advances in InP HEMT WR1.5 Amplifier MMICs

We show on-wafer measured data for four amplifier designs targeting the WR1.5 band. One design shows gain exceeding 20 dB over the entire WR1.5 bandwidth. We show the maturation of the InP HEMT process, and show that now fewer gain stages are necessary to achieve comparable gain numbers reported in past publications. We also show that gain is achievable with larger device peripheries. These larger periphery devices should ultimately allow for greater saturated output power levels, though this is not confirmed at the time of this writing.