High hole mobility front-gate InAs/InGaSb-OI single structure CMOS on Si

We have demonstrated the front-gate (FG) III-V single structure CMOS using ultra-thin body (UTB) InAs/InGaSb on insulator (-OI) on Si substrates with high hole mobility (μ
_eff
) of 240 cm
²
V
^-1
s
^-1
. We have found that the μ
_eff
is enhanced by the buffered-HF (BHF)-cleaned InAs MOS interfaces, Ni alloy S/D, and the InAs/strained InGaSb-OI hetero-interface channel. The CMOS operation using FG InAs/InGaSb-OI n/p-MOSFETs has been realized.