Design and Implementation of a High-efficiency Three-level Inverter Using GaN HEMTs

In this paper, a three-level Neutral Point Clamped (NPC) single phase inverter using GaN HEMT devices is discussed. A simple low cost three-level boot-strap driver circuit is applied. Using non-isolated power for the driver avoids interference between the drive and control circuits due to the very high dv/dt switching speed of GaN. Finally, a 2 kVA 100 kHz threelevel inverter using 600 V GaN HEMTs is designed and tested for validation.