Role of encapsulation formulation on charge transport phenomena and HV device instability

Four molding-compound composites with different silica micro-filler size and concentration have been measured on top of dedicated IC test structures. The leakage current of charge sensors has been monitored under different high-voltage stress during charging/discharging transients occurring in the mold. Physical insight of space charge distribution at high electric field and temperature has been obtained by TCAD analysis. The role played by the encapsulation composition on the device-package interaction has been investigated via TCAD simulations of the HTRB test of a Single-RESURF LDMOS.