Smart co-integration of light sensitive layers with FDSOI transistors for More than Moore applications

We demonstrate for the first time that FDSOI technology can be turned into an integrated light-sensitive device technology capable of detecting or interacting with light. By designing a dedicated diode below the BOX, light absorption induced V
_T
shifts as large as 100mV and saturation drain current modulation of 70% are measured for the transistors above the BOX. Those experimental results are supported by TCAD simulations and pave the way to More than Moore applications for FDSOI technology.