High performance Ge-pMOSFET integrated on Si platform

Hetero-integration of high mobility Ge pMOSFET on Si platform is successfully demonstrated in this paper. Fully relaxed high-quality Ge is grown on Si by a two-step epitaxy method. By controlling the high-k/Ge interface passivation technique using ozone treatment, high performance Ge-pMOSFET on Si(100) substrate with a peak mobility of 524 cm
²
/Vs and an I
_on
/I
_off
ratio of >10
⁴
is obtained. This work presents a good solution for high-mobility pMOSFETs in future technology node.