Design of single crystal silicon based RF MEMS switch with high contact force

A metal contact RF MEMS switch based on single crystal silicon is presented in this article. Performance of the switch is demonstrated numerically in simulations. The mN-level contact and release forces are achieved. Pull-in voltage is calculated to be 40V. 1.5mN contact force and 1.2mN release force are achieved when actuation voltage is 50V. The isolation and insertion loss are better than -30.8dB and -0.09dB respective between DC and 10GHz. The fabrication process is presented as well.