An enhanced 180nm millimeter-wave SiGe BiCMOS technology with fT/fMAX of 260/350GHz for reduced power consumption automotive radar IC's

Several performance improvements on a 180nm SiGe:C BiCMOS technology targeted for improved millimeter-wave performance are described. SiGe HBT performance metrics, including fT, fMAX, and CML gate delay are improved 20-30%. fT/fMAX of 260/350GHz are achieved with a minimum gate delay of 3.2ps, without impacting the thermal budget of the technology. BEOL and ground plane optimization reduced transmission line loss to <;1dB/mm at ~80GHz.