A physical model for high power trench gate IGBTs

This paper presents a physical based model for high power trench gate Insulated Gate Bipolar Transistors (IGBTs). The presented model is developed and improved based on Fourier Based Model for IGBTs and power diodes. With the model realization based Matlab Simulink/ Pspice, the model is verified by experiments. Comparing with the conventional IGBT models, the present model gives high speed and accurate results.