A physical modeling method for NPT IGBTs verified by experiments

This paper presents a physical modeling method for Non Punch Through (NPT) Insulated Gate Bipolar Transistors (IGBTs). The model is based on the solution to ambipolar diffusion equation (ADE) and can be achieved by engineering software MATLAB or PSPICE. The presented model is verified by experiments. With an interface between the presented model and thermal model of IGBT module, the model can be extended to thermo-electric model easily.