A novel method of gate capacitances extraction for IGBT physical models

This paper presents a novel method for gate capacitances extraction of Insulated Gate Bipolar Transistor (IGBT). Gate capacitances are critical for IGBT physical models with accurate turn-on/off transient characteristics. The model is developed and expanded based on the conventional IGBT physical model, and the developed method can be obtained by several simple experiments. The presented method was verified by both IGBT datasheet and professional measurements, and can be used for gate capacitances extraction of Power Metal-Oxide- Semiconductor Field Effect Transistor (MOSFET) and Integrated Gate Commutated Thyristor (IGCT).