Group IV channels for 7nm FinFETs: Performance for SoCs power and speed metrics

Smart Mobile SoCs combine the need for speed and for power efficiency. For the 7nm node, high-mobility materials (SiGe, Ge, and IIIV) are candidates to replace Si channels and continue speed improvement, but are more prone to leakage currents impacting active leakage power. Transport and voltages at scaled dimensions could also influence the benefit of higher mobility. We evaluate these aspects for group IV channels devices in the SoC context using an holistic approach over energy-delay metrics and in a node to node perspective. At the 7nm node, Ge devices are expected to reach 34% improvement in frequency at V
dd
of 0.65V assuming a series resistance of 230 Ω-um can be reached. Low power complementary Si devices are needed to meet the active leakage budget of mobile SoCs.