InGaAs MOSFET source structures toward high speed/low power applications

High on-currents (Ion) and low off-currents (I
off
) under low supply voltage are important for logic applications. A heavily doped InP source was introduced to demonstrate the existence of high Ion in InGaAs MOSFETs, and I
D
= 2.4 mA/μm at V
D
= 0.5 V was observed. GaAsSb source was introduced in InGaAs tunnel FET to realize low I
off
. Narrow channel body was found to be essential for steep sub-threshold (SS) dependence, and a fabricated GaAsSb/InGaAs vertical tunnel FET with a 26 nm wide body showed steep SS. In addition, an InGaAs/InP super-lattice source was studied to consider the possibility of simultaneous high I
on
and low I
off
realization.