Deep plasma etching process investigation of polyimide materials for forming interlayer connections in microelectronic nodes

Research results of ion - initiated etching processes of polymer films based on polyimide in oxygen plasma, sulfur hexafluoride and oxygen-argon mixtures of low pressure (around 10-12 Pa) have been shown. Operating modes of deep plasma chemical polyimide etching have been established using IDP TM RHS 100 installation. Optimal values of main technological parameters: etching rate - 0.8 μm/min, sample etching uniformity-not less than 92%; anisotropy - 0.95 have been determined.