Development of ultrahigh voltage SiC power devices

Ultrahigh voltage SiC devices and their package technology were investigated. As a result, we have succeeded in creating a 13kV level PiN diode without forward voltage degradation by using 4° off substrates and a 15kV level p-channel IGBT and 16kV level n-channel IGBT with a low differential specific on-resistance (R
_diff,on
). Moreover, the results reveal that the nano-tech resin, improved resin and Si
₃
N
₄
DBC substrate are the best materials for package at high temperature and ultrahigh voltage.