Advanced SOI gate driver IC with integrated VCE-monitoring and negative turn-off gate voltage for medium power IGBT modules

A novel approach for medium power IPMs is presented combining 600V and 1200V IGBT/FWD-inverter modules based on spring contact technology with advanced silicon on insulator (SOI) gate driver ICs with fully integrated V
CE
-monitoring and negative turn-off gate voltage in a reliable cost effective package with excellent thermal conductivity. For the V
CE
-monitoring of short circuit events the HV-diode and the processing circuit are fully integrated for each switch on the TOP and BOT secondary side. Thanks to the SOI technology which blocks voltages in both directions a negative turn-off gate voltage of −5V can be used for the first time inside an IC to prevent an unmotivated turn-on of the OFF-IGBT during switching of higher currents (>100A) inside a half bridge. The presented static and dynamic measurement results demonstrate the driver and system performance. The new system approach for medium power industrial drive applications supports the market trend towards intelligent power module solutions already known from the low power consumer market.