12W/mm with 0.15µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications

We report on the development of a 0.15μm gate length InAlN/GaN HEMT on SiC substrate technology for applications in K and Ka-Bands. Measurements results of pulsed I-V, S-parameters, load-pull and RF noise figure are presented. Devices exhibit a maximum DC transconductance of 350mS/mm and Idss of 0.95A/mm. Cut-off frequencies F
_T
and F
_mag
of 45GHz and 100 GHz are reached. Load-pull power measurements at 18GHz allowed us to achieve an output power density of 12W/mm in pulsed mode at Vds=50V. At 30 GHz, 2.5W/mm was measured at Vds=20V. RF noise measurements showed a minimum noise figure of 1.25dB at 20 GHz.