Packaging Technology Platform for Next Generation High Power IGBT Modules

To enable smaller and more cost efficient inverter designs, new power modules are designed for low losses, reliable operation at high temperature, high current and high switching frequencies. The IGBT module design presented in this paper features large silicon active area for low on-state losses, good internal temperature distribution, high current conductor leads with well-designed electro-magnetic behaviour and highly reliable joining techniques. Simulation results as well as experimental results from prototypes are presented.