Insights in accesses optimization for nFET low temperature Fully Depleted Silicon On Insulator devices

This work gives insights on the performance levers to optimize nFET Fully Depleted Silicon On Insulator sheet resistance with low temperature activation. Optimum dopant concentration, i.e clusterization limit for arsenic and phosphorus activated at 600°C has been extracted. This study shows that phosphorus appears to be the best candidate for nFET low temperature doping. Solid Phase Epitaxial Regrowth at 600°C enables to reach activation levels identical to the thermodynamic equilibrium at 1050°C.