Cluster molecule implantation for ultra shallow junction — A review

Molecular Cluster Ion implantation offers an attractive alternative approach to realize applications in semiconductor devices at 20nm node and beyond with stringent requirements for ultra-shallow depths and very low thermal budgets. We present here the review of molecular cluster ion (like B
₁₈
H
₂₂
, C
₇
H
₇
, C
₁₆
H
₁₀
species) advantages with their special property of creating self-amorphous layer even at a lower dose and other activation properites with various anneal techniques. This article will review various results obtained so far using molecular cluster ion implantation for different applications.