Fabrication and characterization of InGaN/GaN MQWs blue light-emitting diodes on sapphire substrate

In this paper, we report successful fabrication and characterization of InGaN/GaN MQWs based blue LEDs on c-plane sapphire substrate. The epitaxial material used in the fabrication of blue LEDs was grown by metal-organic-chemical vapor deposition (MOCVD) system. The threshold voltage (V
th
) of fabricated InGaN/GaN MQWs blue LED on c-plane sapphire substrate was ∼ 3.1 V.