BEOL compatible (300°C) TiN/TiOx/Ta/TiN 3D nanoscale (∼10nm) IMT selector

TiO
_x
based Insulator-Metal-Transition (IMT) devices with TiN electrode were investigated for selector application. To maximize heat confinement, we adopted localized filament by breaking stoichiometric ALD TiO
₂
layer. Using Ti
₄
O
₇
target and reduction annealing with Ta electrode, IMT layer was formed. By optimizing device structure to maximize heat confinement and oxygen stoichiometry to obtain IMT Ti
₃
O
₅
layer, we could maximize IMT characteristics at low threshold power. Scaling device area significantly improves the IMT characteristics. Moreover, reliable 1S1R characteristics were also confirmed.