A high speed SOI LIGBT with electronic barrier modulation structure

A high speed lateral SOI IGBT (BM-LIGBT) with an electronic barrier modulation structure, which was not reported in previous literatures, is proposed in this paper in order to remarkably improve turn-off speed of the SOI LIGBT. Two important mechanisms are realized in this device: one is the electronic barrier modulation for speeding up the device turn off and for providing the same injection efficiency as conventional SOI LIGBT's, the other is the super-junction structure for improving breakdown voltage of devices. Compared with the conventional SOI LIGBT, the proposed device shows that the turn-off time of BM LIGBT is only 27%–39% of a conventional SOI LIGBT under the same breakdown voltage of 600V and on-state current of 100A/cm
²
. Numerical analysis and experimental results show that the proposed device presents a better trade-off relationship between on-state resistance and turn-off time.