Investigation of the base resistance contributions in SiGe HBT devices

The internal base resistance, that presents a crucial figure of merit and parameter for accurate RF device modelling is investigated. The reliability of a widely used approach for geometry scalable parameter extraction is analysed using measurement data of a state-of-the-art SiGeC HBT technology. The obtained results are used for numerical device simulations of the inner base as well as the base link region to verify the resistance values. Furthermore results from an alternative approach using measured S-parameter data from standard RF structures are compared by means of the semi-circle method.