SiGe wideband power detector and IF-amplifier RFICs for W-band passive imaging systems

This paper presents the results of some W-band power detector and wideband (IF) amplifier circuit designs made in 0.25 μm and 0.13 μm SiGe BiCMOS processes. Two 0.25 μm SiGe wideband power detector and amplifier RFICs present an NEP =1-2 pW/Hz
^1/2
at 85-101 GHz and s
₂₁
=10-19 dB at 2-32 GHz, respectively. To the authors' knowledge, the proposed SiGe detector design reports the widest Sn bandwidth (s
₁₁
≤ -10 dB 84-104 GHz) among SiGe based W-band detectors. Two 0.13 μm SiGe detector/amplifier circuits show a simulated NEP=0.2-0.9 pW/Hz
^1/2
at 75-100 GHz and S
₂₁
= 19-21 dB at 5-30 GHz. The presented SiGe power detectors and (IF) amplifiers are targeting broadband applications such as passive imaging.