A resistive sensor for 0.3–0.4 THz band

Based on a three-dimensional finite-difference time-domain (FDTD) method, interactions between a high power terahertz pulse and an n-type silicon block fixed in a piece of rectangular waveguide has been researched for 0.3–0.4 THz band. The distribution of electric field in y-direction, voltage standing wave ratio (VSWR), and average electric field within the silicon block are calculated and analyzed. By adjusting several factors, such as the length, width, height and specific resistance of the silicon block, a more optimal resistive sensor that can be used as a device for high-power terahertz pulse measurement is proposed. The conclusion is that the sensor owns rather a flat relative sensitivity of about 1.048 kW
⁻¹
and the peak value of VSWR is no more than 1.34 at frequencies from 0.3 THz to 0.4 THz.