Room-temperature quantum oscillations in Ge junctionless MOSFETs at the scaling limit

Quantum effects play a significant role in the characteristics of nanoscale devices. Observation of quantum phenomena is often limited to low temperature measurements. Shrinking device sizes to the scaling limit of several nanometers can make quantum energy gap overcome thermal broadening, so that quantum characteristics become prominent even at room temperature. In this abstract, by combining the junctionless MOSFET structure and a novel V-groove etch process
^[1]
, we demonstrate germanium on insulator (GeOI) junctionless pMOSFETs with ultra-thin channel thickness (T
ch
) and sub-10nm channel length (L
ch
). Devices with L
ch
from 6 to 15 nm show strong quantum oscillations in I
ds
-V
gs
characteristics at room temperature. Control devices, with thicker channels, show large I
on
/I
off
ratios of > 10
⁵
, and high drain currents of 650 mA/mm.