Two-power-law relaxation processes in semiconductors possessing metastable defects

In this paper the two-power-law relaxation behavior of semiconducting materials possessing deep, metastable defects is analyzed in terms of a model leading to new power-law relaxation pattern being a mixture of the generalized Mittag-Leffler (GML) and Havriliak-Negami (HN) responses, which enlarges the class of physically well grounded fitting functions. Applying the probabilistic representation of the relaxation decay, we show that such a mixture can be derived from an extension of the stochastic model of correlated clusters.