High-performance fully transparent Ga-doped ZnO TFTs fabricated by RF Magnetron Sputtering

We report on the fabrication of fully transparent Ga-doped ZnO TFTs on glass. The device shows excellent performance which on-off ratio, V
_t
, SS, field effect mobility is 4×10
⁹
, 3.2v, 235mV/decade, 370cm2/v·s, respectively. The performance is significantly improved by annealing treatment, with much steeper SS of 107mV/decade and much lower V
_t
of 0.7v.