Yield improvement of gadolinium oxide resistive switching memory with oxygen post-metallization annealing

Different post-metallization annealing gas ambient has been performed in the gadolinium oxide resistive switching memories to enhance the fabrication yield. The superior memory properties such as the low set and reset voltages (-1.4 V and 2.1 V) and high resistance ratio (~10
⁴
) are successfully achieved. With no degradation of the memory characteristics, the fabrication yield of the oxygen post-metallization annealed gadolinium oxide resistive switching memories can be increased to over 60% due to the sufficient mobile oxygen ions supplied in the gadolinium oxide layers.