A compact V-band active SiGe power detector

A compact V-band active power detector using Infineon 0.35 μm SiGe HBT process (f
_T
/f
_max
=170/250 GHz) is described. The total chip area is only 0.35×0.8 mm
²
including all pads. This design exhibits a dynamic range larger than 20 dB over the frequency range from 55 GHz to 67 GHz. It also offers a simple and low-power application potential as an envelop detector in multi-Gbps high data rate demodulators for OOK/ASK etc.