Chaotic Behavior of Random Telegraph Noise in Nanoscale UTBB FD-SOI MOSFETs

Low frequency noise in nanoscale fully depleted ultra-thin body and buried oxide n-MOSFETs is not as random (stochastic) as it appears to be. The fluctuation of the drain current in such nano-devices, under certain bias conditions, exhibits complex random telegraph noise (RTN) that is usually observed in chaotic systems. Indeed, the deterministic chaotic nature of this noise-like variation is confirmed by means of the combined calculation of established nonlinear dynamics metrics. Specifically, the correlation dimension, the phase portrait of the reconstructed chaotic attractor, and the Lyapunov spectrum, conclude for a hyperchaotic behavior of the complex RTN with fractal characteristics.