A 1024-bit, fused link CMOS PROM

PROGRAMMABLE read-only memories (PROMs) have been available for several years. Previous fused-link PROMSs ^1,2 have used bipolar technology with its accompanying high power dissipation. MOS PROMs have used charge storage in dualdielectric^3 or floating-gate structures. The operating range of these memories is limited by charge loss at elevated temperature^5,6.. This paper will describe a fused-link CMOS PROM which overcomes these earlier limitations. The basic features are summarized in Table I.