Electron-beam fabricated GaAs integrated circuits

Direct writing electron-beam lithography has been utilized to fabricate high speed GaAs FET integrated circuits. The fabrication, design and testing of NOR and NAND gate flip flops incorporating 0.5 µm long single and dual-gate FETs is described. The results obtained represent the most complex GaAs integrated circuits fabricated entirely with E-beam lithography and the fastest GaAs FET logic circuits reported.