EOT measurement for ultra-thin gate dielectrics using LC resonance circuit [MOS devices]

The EOT measurement method, using the LC resonance circuit (LC resonance method), for thin gate dielectrics having a large leakage current, is demonstrated. In the LC resonance method, only an external inductance and a resistance and a simple equivalent electrical circuit of MOS devices are employed. The EOT value from thicker gate dielectrics (/spl sim/10 nm) to thinner gate dielectrics (/spl sim/1 nm) with large leakage current can be defined by the impedance-frequency characteristics at resonance and be verified at other frequency regions and with DC gate current-gate voltage characteristics.