Temperature-independent high voltage reference design in silicon-on-insulator CMOS technology

Temperature independence for voltage reference circuits designed in silicon-on-insulator CMOS technology. This design takes advantage of high-voltage devices recently developed for a 0.35 um process. This paper focuses on unique aspects of design in this process, using a voltage reference as a vehicle. The underlying circuit is a high voltage reference, designed in a diode configuration and in a MOSFET configuration. Layout considerations common to both of the circuits are outlined. Design equations are developed. Performance is characterized through SPICE simulations.