A /spl gamma/ effect on the power MOSFET

The electrical characteristics of solid state devices such as BJT (bipolar junction transistor) and MOSFET, etc. are altered by impinging photon radiation and temperature in the space environment In this paper, the threshold voltage, the breakdown voltage, and the on-resistance for the two kinds of MOSFET's (200 V and 100 V of V/sub DSS/) are tested to /spl gamma/-irradiation and compared with the specifications under the pre and post irradiation of low dose rates of 4.97 and 9.55 rad/sec, and maximum total dose of 30 Krad. In our experiment, the /spl gamma/ radiation facility with low dose available at KAERI (Korea Atomic Energy Research Institute) has been applied on two commercially available IR (International Rectifier) products of IRFP250 and IRF540.