A novel transparent air-stable printable n-type semiconductor technology using ZnO nanoparticles
Volkman, S.K.; Mattis, B.A.; Molesa, S.E.; Lee, J.B.; de la Fuente Vornbrock, A.; Bakhishev, T.; Subramanian, V.
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Volume , Issue , 13-15 Dec. 2004 Page(s): 769 - 772
Digital Object Identifier   10.1109/IEDM.2004.1419287
Summary: We report on a novel, air-stable, printable, transparent, NMOS semiconductor technology using soluble ZnO nanoparticles. We demonstrate solution-processed transistors with mobility > 0.1 cm/sup 2//V/spl middot/s, which is the highest solution-processed NMOS mobility reported to date. The air-stability and transparency make this device an ideal candidate for low-cost printed displays and CMOS circuitry.

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