Comparison of Monte Carlo and NEGF simulations of double gate MOSFETs

This paper compares the simulation results of the two-dimensional full band Monte-Carlo simulator (MoCa) developed at the University of Illinois at Urbana-Champaign and the two-dimensional quantum simulator (NanoMOS) developed at Purdue University. MoCa's semi-classical approach using a quantum correction is known to be accurate for devices as small as a 50nm bulk MOSFET. For smaller devices, we expect its particle-based transport model to be reasonably accurate, but the quantum correction might not capture all the details of the charge distribution. In contrast, NanoMOS's quantum mechanical approach is expected to provide accurate estimates of charge density, but its transport model is not very detailed. In this paper, we have sought to ascertain the domain of applicability of the two simulators and envision a super-simulator that would include the best of both approaches.