A gate drive circuit for silicon carbide JFET

In this paper, a gate drive circuit for a 1300 V/4 A SiC-JFET is proposed and evaluated experimentally for a switching frequency of 200 kHz. Furthermore, a comparison of the switching behavior of a SiC-JFET/Si-MOSFET cascode and of the SiC-JFET driven by the proposed gate drive circuit is shown.