Simulation of interface roughness in DG-MOSFETs using non-equilibrium Green's functions

The interface roughness is a crucial factor in DG-MOSFET performance, as indicated by the International Technology Roadmap for semiconductors. A modified nanoMOS simulator is employed based on the non-equilibrium Green's function (NEGF) to model DG-MOSFETs with rough interfaces. Reconstruction of rough interfaces with accurate spectral models is based on a 1D Fourier synthesis.