FinFET SONOS flash memory for embedded applications
Peiqi Xuan; Min She; Harteneck, B.; Liddle, A.; Bokor, J.; King, T.-J.
Electron Devices Meeting, 2003. IEDM apos;03 Technical Digest. IEEE International
Volume , Issue , 8-10 Dec. 2003 Page(s): 26.4.1 - 26.4.4
Digital Object Identifier   10.1109/IEDM.2003.1269355
Summary: FD-SOI (fully depleted silicon-on-insulator) FinFET SONOS flash memory devices are investigated for the first time, and they are found to be scalable to a gate length of 40 nm. Although the FinFET SONOS device does not have a body contact, excellent program/erase characteristics are achieved, together with high endurance, long retention time and low reading disturbance. Devices fabricated on [100] and [110] silicon surfaces are compared.

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