Surface smoothing effect in patterned SOI fabrication with SIMOX technology

Patterned SOI wafers are successfully fabricated with low dose-internal thermal oxidation-SIMOX (LD-ITOX-SIMOX) process. Surfaces of SOI and bulk regions are shown to be almost at the same height level regardless of large volume expansion at buried oxide (BOX) in SOI region because of surface smoothing effect of ITOX-SIMOX anneal.