A new scaleable low frequency noise model for field-effect transistors used in resistive mixers

A new scaleable low-frequency noise model for cold-FETs (U/sub ds/ /spl ap/ 0 V) is proposed. The model was tested using the Fujitsu HEMT FHC40LG in resistive mixer circuits where low-frequency noise (1/f-noise and generation-recombination noise) occurs due to the self-mixing process. Describing the noise of the FET channel as resistance fluctuations the model explains the existence of noise in absence of a DC current. A method for implementing resistance noise in common CAE programs is also shown. The model yields excellent-agreement with simulation results.