Bias and temperature dependent hot-carrier characteristics of sub-100 nm partially depleted SOI MOSFETs

In this paper, we report hot-carrier behavior of sub-100 nm partially depleted SOI MOSFETs at room (25C) and high temperature (100C) under various stress conditions. It was observed that V/sub G/=V/sub D/ was the worst case and more sensitive to temperature variation. SOI is more sensitive to operation temperature than bulk transistors. Hot carrier activation energy has also been extracted in the experiments.