Radiation effects on commercial CCDs

Many studies were performed to evaluate charge coupled devices (CCD) under high-energy radiation. As total dose effects concern mainly the oxide charge generation and interface traps at oxide/semiconductor interface, proton and neutron irradiation increase the bulk damage concentration. Different works proposed modeling of dark current increase induced by protons and/or experimental results on total dose effects. Many works concerns rad-tolerant devices. In order to understand degradation processes in commercial CCDs, where total dose induced dark current increase may be more critical for the global device behavior, we have irradiated a component type with a /sup 60/Co source and characterized effects on dark current, conversion factor, CTI (charge transfer inefficiency) and supply current. The second part of the paper presents results from a more complete proton, neutron and /sup 60/Co experiment (on a Sony CCD).