Evaluation of visible and near-IR lasers diodes subjected to electron and gamma-ray irradiation

This paper reports our research on semiconductor laser electric and opto-electronic characteristics change, as they are subjected to electron and gamma-ray irradiation. Laser diodes, working in the visible (635 nm-670 nm) and near-IR (780 nm-850 nm) ranges, were investigated for different operating temperature and driving current regimes.